D1136

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1136 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20C package ·High collector-base breakdown voltage : VCBO=200V(min) APPLICATIONS ·For power switching and TV vertical deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO Collector-base voltage Collector-emitter voltage Open emitter Open base VEBO IC ICM Emitter-base voltage Collector current Collector current-Peak PC Collector power dissipation Open collector Ta=25 TC=25 Tj Junction temperature Tstg Storage temperature VALUE 200 80 5 4 5 1.8 30 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1136 CHARACTERISTICS www.datTasj=h2ee5t4u.ucnomless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.4 A VBEsat Base-emitter saturation voltage IC=4 A;IB=0.4 A ICEO Collector cut-off current VCE=200V; IB=0 IEBO Collector cut-off current VEB=5V; IC=0 hFE DC current gain IC=4A ; VCE=5V MIN TYP. MAX UNIT 80 V 5V 1.5 V 1.5 V 50 50 20 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com Product Specification 2SD1136 Fig.2 Outline dimensions (uni...