2SC5002
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
sAbsolute maximum ratings (T...
2SC5002
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switchihg
Transistor)
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC5002 1500 800 6
7(Pulse14) 3.5
80(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB
Conditions VCB=1200V VCB=1500V
VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
(V) (Ω) (A)
(V) (V)
200 50 4 10 –5
IB1 (A)
0.8
IB2 (A)
–1.6
Application : Display Horizontal Deflection Output, Switching
Regulator and General Purpose
(Ta=25°C) External Dimensions FM100(TO3PF)
2SC5002
100max 1max
100max 800min
8min 4 to 9
5max 1.5max
4typ 100typ
Unit µA mA µA
V
V V MHz pF
tstg (µs)
4.0max
tf (µs)
0.2max
16.2
23.0±0.3 9.5±0.2
0.8±0.2
15.6±0.2
5.5±0.2 3.45 ±0.2
5.5
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 6.5g a. Type No. B C E b. Lot No.
Collector Current IC(A)
I C– V CE Characteristics (Typical)
7 1.5A
1.2A
6
5 700mA
4 400mA
3 200mA
2 IB=100mA
1
0 0 1 2 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Collector Current IC(A) 12255˚˚CC((CCaasseeTTeemmpp)) –30˚C (Case Temp)
VCE(sat)–IC Characteristics (Typical)
3 (IC: IB=5 :1)
2
I C– V BE Tempera...
