MXP4004BT

40V N-Channel MOSFET MXP4004BT/BE Datasheet Applications: z Power Supply z DC-DC Converters Features: z LeadFree z Low RDS(ON) to Minimize Conductive Loss z Low Gate Change for Fast Switching Application z Optimized BVDSS Capability VDSS 40 V RDS(ON) (Max) 4.0 mΩ IDa 173 A Ordering Information Part Number Package Brand MXP4004BT TO220 MXP MXP4004BE TO263 Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol MXP Parameter TO-263 Value Units VDS Drain-to-Source Voltage IDa Continuous Drain Current (TC=25℃) IDM Pulsed Drain Current @VG=10V EAS Single Pulse Avalanche Energy (L=1mH) 40 V 173 A 693 724 mJ IAS Pulsed Avalanche Energy Figure.9 A TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ a. Calculated continuous current based upon maximum allowable junction temperature, +175℃. Package limitation current is 80A. OFF Characteristics TJ=25℃ unless otherwise specified Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward IGSS Leakage Gate-to-Source Reverse Leakage ©MaxPower Semiconductor Inc. Min Typ Max Units Test Conditions 40 V VGS=0V, ID=250µA 1 µA VDS=32V, VGS=0V 100 VDS=32V, VGS=0V TJ=125 ℃ 100 VGS=+20V nA 100 VGS= -20V 1 MXP4004BT Rev 1.0, Sep 2011 ON Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min Typ Max Units Test Conditions RDS(ON) Static Drain-to-Source On-Resistance 2.5 4 mΩ VGS= 10V, ID=24A...