Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SC1788
s...
Transistor
2SA1512
Silicon
PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SC1788
s Features
q Low collector to emitter saturation voltage VCE(sat). q Optimum for low-voltage operation and for converters. q Allowing supply with the radial taping. q Optimum for high-density mounting.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –25 –20 –7 –1 – 0.5 300 150
–55 ~ +150
Unit V V V A A mW ˚C ˚C
4.0±0.2
Unit: mm
3.0±0.2
15.6±0.5
+0.2 0.45–0.1 0.7±0.1 2.0±0.2
marking 123
1.27 1.27 2.54±0.15
1:Emitter 2:Collector 3:Base
EIAJ:SC–72 New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage Collector to emitter voltage Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob
VCB = –25V, IE = 0
–100 nA
VCE = –20V, IB = 0
–1 µA
IC = –10µA, IE = 0
–25
V
IC = –1mA, IB = 0
–20
V
IE = –10µA, IC = 0
–7
V
VCE = –2V, IC = –0.5A*2
90 220
VCE = –2V, IC = –1A*2
25
IC = –500mA, IB = –50mA*2
– 0.4
V
IC = –500mA, I...
