Si3443CDV

P-Channel 20 V (D-S) MOSFET Si3443CDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.060 at VGS = - 4.5 V - 20 0.084 at VGS = - 2.7 V 0.100 at VGS = - 2.5 V ID (A)a - 4.7 - 3.9 - 3.4 Qg (Typ.) 7.53 nC TSOP-6 Top View FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS HDD Asynchronous Rectification Load Switch for Portable Devices (4) S 16 3 mm 25 34 2.85 mm Marking Code AL XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free) Si3443CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 ± 12 - 5.97 - 4.6 - 4.7b, c - 3.4b, c - 20 - 2.67 - 1.71b, c 3.2 2.05 2b, c 1.28b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t ...