Document
2SC3203 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdivided into tow group, O And Y and according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Symbol VCBO VCEO VEBO IC IE Ptot Tj Tstg
Value 35 30 5 800 -800 600 150
- 55 to + 150
Unit V V V mA mA
mW OC OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 700 mA
Current Gain Group O hFE
100
-
200
-
Y hFE
160
-
320
-
hFE 35
-
-
-
Collector Base Cutoff Current at VCB = 35 V
ICBO
-
- 0.1 µA
Emitter Base Cutoff Current at VEB = 5 V
IEBO
-
- 0.1 µA
Collector Emitter Breakdown Voltage at IC = 10 mA
V(BR)CEO
30
-
-
V
Collector Emitter Saturation Voltage at IC = 500 mA, IB = 20 mA
VCE(sat)
-
- 0.5 V
Base Emitter Voltage at IC = 10 mA, VCE = 1 V
VBE 0.5 - 0.8 V
Transition Frequency at VCE = 5 V, IC = 10 mA
fT - 120 - MHz
Collector Output Capacitance at VCB = 10 V, f = 1 MHz
Cob - 13 - pF
Page 1 of 2
7/15/2011
Total power dissipation, mW
Pc – Ta
800 600 400 200
0 50 100 150 200
Ambient temperature Ta ( C)
Page 2 of 2
7/15/2011
.