C3875

2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 150 125 -55 to +125 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=2mA Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - L hFE 350 - 700 - Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency VCE(sat) ICBO IEBO - 0.1 0.25 V - 0.1 μA - 0.1 μA at VCE=10V, IC=1mA Collector Output Capacitance fT 80 - - MHz at VCB=10V, f=1MHz Noise Figure COB - 2 3.5 pF at VCE=6V, IC=0.1mA f=1KHz, RG=10KΩ NF - 1 10 dB Page 2 of 2 7/15/2011 ...