GT50J322

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms Emitter-Collector Foward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range VCES VGES IC ICP IF IFP PC Tj Tstg 600 ±20 50 100 30 60 130 150 −55~150 V V A A W °C °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). EQUIVALENT CIRCUIT MARKING TOSHIBA GT50J322 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (P...