GT50J102
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J102
HIGH POWER SWITCHING APPLICATIONS MO...
GT50J102
TOSHIBA INSULATED GATE BIPOLAR
TRANSISTOR SILICON N CHANNEL IGBT
GT50J102
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed.
: tf = 0.30μs (Max.)
z Low saturation voltage. : VCE(sat) = 2.7V (Max.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range Screw Torque
DC 1ms
VCES VGES
IC ICP PC Tj Tstg ―
600 ±20 50 100 200 150 −55~150 0.8
V V
A
W °C °C N・m
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
MARKING
TOSHIBA
GT50J102
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2006-11-01
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
GT50J102
CHARACTERISTIC
SY...