BD946

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= -500mA ·Complement to Type BD943/945/947 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD944 -22 VCBO Collector-Base Voltage BD946 -32 BD948 -45 VCEO Collector-Emitter Voltage BD944 -22 BD946 -32 BD948 -45 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -5 ICM Collector Current-Peak -8 IB Base Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W BD944/946/948 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD944/946/948 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD944 BD946 BD948 IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD944/946 IC= -2A; IB= -0.2A BD948 IC= -3A; IB= -0.3A VBE(on) ICBO ICEO Base-Emitter On Voltage BD944/946 BD948 Collector Cutoff Current Collector Cutoff Current BD944 BD946 BD948 IC= ...