STF11N65M2

STF11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP package 23 1 TO-220FP Features Order code VDS RDS(on) max. STF11N65M2 650 V 0.68 Ω Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected ID 7A PTOT 25 W D(2) G(1) S(3) Applications Switching applications NG1D2S3Z Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STF11N65M2 Product summary Order code STF11N65M2 Marking 11N65M2 Package TO-220FP Packing Tube DS10136 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STF11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope dv/dt(4) MOSFET dv/dt ruggedness VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature range TJ Operating junction temperature range 1. Lim...