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GT40M101

Toshiba Semiconductor
Part Number GT40M101
Manufacturer Toshiba Semiconductor
Description SILICON N-CHANNEL IGBT
Features GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS U...
Published Mar 23, 2005
Datasheet PDF File GT40M101 PDF File


GT40M101
GT40M101


Features
GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement−Mode : tf = 0.4µs (Max.) : VCE(sat) = 3.4V (M...



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