GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
Unit: mm
Fourth-generation IGBT
Enhancement mode type
Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.8...
