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GT20J101

Toshiba Semiconductor
Part Number GT20J101
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching A...
Datasheet PDF File GT20J101 PDF File

GT20J101
GT20J101

Overview
GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.
30 µs (max) Low Saturation Voltage: VCE (sat) = 2.
7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 20 40 130 150 −55~150 Unit V V A W °C °C JEDEC JEITA TOSHIBA Weight: 4.
6 g ― ― 2-16C1C 1 2002-01-18 GT20J101 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage ...


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