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GT15J321

Toshiba Semiconductor
Part Number GT15J321
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fa...
Datasheet PDF File GT15J321 PDF File

GT15J321
GT15J321

Overview
GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit: mm • • • • • • The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.
03 µs (typ.
) Low saturation Voltage: VCE (sat) = 1.
90 V (typ.
) FRD included between emitter and collector.
Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 15 30 15 30 30 150 −55~150 Unit V V A JEDEC ...


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