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GT10J321

Toshiba Semiconductor

Silicon N-Channel IGBT


Description
TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications ●  ●  ●  ●  ●  The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ●  :t High speed f=0.03μs(typ.) ●  Low switching loss :Eon=0.26mJ(typ.) :E...



Toshiba Semiconductor

GT10J321

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