C1906

2SC1906 Silicon NPN Epitaxial Planar Application VHF amplifier Mixer, Local oscillator Outline TO-92 (2) 3 2 1 1. Emitter 2. Collector 3. Base 2SC1906 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown voltage V(BR)CBO 30 Collector to emitter breakdown V(BR)CEO voltage 19 Emitter to base breakdown voltage V(BR)EBO 2 Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance I CBO hFE fT Cob — 40 600 — Collector to emitter saturation VCE(sat) voltage — Base time constant rbb’ CC — Power gain PG — — Typ Max Unit Test conditions — —V IC = 10 µA, IE = 0 — —V IC = 3 mA, RBE = ∞ — —V IE = 10 µA, IC = 0 — — 1000 1.0 0.2 0.5 — — 2.0 1.0 µA MHz pF V VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA 10 25 ps VCB = 10 V, IC = 10 mA, f = 31.8 MHz 33 — dB VCE = 10 V, f = 45 MHz IC = 5 mA 18 — dB VCE = 10 V, f = 200 MHz IC = 5 mA 2 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) Typical Transfer Ch...