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MGA-683P8 Dataheets PDF



Part Number MGA-683P8
Manufacturers AVAGO
Logo AVAGO
Description Low Noise And High Linearity Active Bias Low Noise Amplifier
Datasheet MGA-683P8 DatasheetMGA-683P8 Datasheet (PDF)

MGA-683P8 Low Noise And High Linearity Active Bias Low Noise Amplifier Data Sheet Description Avago Technologies’ MGA-683P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75 mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 450 MHz up to 2 GHz. The compact footp.

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MGA-683P8 Low Noise And High Linearity Active Bias Low Noise Amplifier Data Sheet Description Avago Technologies’ MGA-683P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75 mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 450 MHz up to 2 GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make the MGA-683P8 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA. For optimum performance at higher frequency from 1.5 GHz to 4 GHz, the MGA-684P8 is recommended. Both MGA-683P8 and MGA-684P8 share the same package and pinout. Pin Configuration and Package Marking 2.0 x 2.0 x 0.75 mm3 8-lead QFN [1] [8] [2] 83X [7] [3] [6] [4] [5] [8] [7] [6] [5] [1] [2] [3] [4] Top View Bottom View Pin 1 – Vbias Pin 2 – RFinput Pin 3 – Not Used Pin 4 – Not Used Pin 5 – Not Used Pin 6 – Not Used Pin 7 – RFoutput/Vdd Pin 8 – Not Used Centre tab - Ground Note: Package marking provides orientation and identification “83” = Device Code “X” = Month Code Features  Low noise Figure  High linearity performance  GaAs E-pHEMT Technology[1]  Low cost small package size: 2.0 x 2.0 x 0.75 mm3  Excellent uniformity in product specifications  Tape-and-Reel packaging option available Specifications 900 MHz; 5 V, 40 mA  17.8 dB Gain  0.56 dB Noise Figure  More than 20 dB Input Return Loss  32.8 dBm Output IP3  21.5 dBm Output Power at 1dB gain compression Applications  Low noise amplifier for cellular infrastructure for GSM and CDMA.  Other low noise application.  Repeater, Metrocell/Picocell application. Simplified Schematic Vdd C5 Rbias C6 R1 C3 R2 C4 RFin L3 L1 C1 [1] [2] [3] [4] L2 [8] C2 [7] [6] [5] RFout Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 90 V (Class A) ESD Human Body Model = 500 V (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Note:  The schematic is shown with the assumption that similar PCB is used for both MGA-683P8 and MGA-684P8.  Detail of the components needed for this product is shown in Table 1.  Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices.  Good RF practice requires all unused pins to be earthed. Absolute Maximum Rating [1] TA=25° C Symbol Vdd Idd Pmax Pdiss Tj Tstg Tamb MSL Parameter Device Voltage, RF output to ground Drain Current CW RF Input Power (Vdd = 5.0 V, Id = 54 mA) Total Power Dissipation [2] Junction Temperature Storage Temperature Ambient Temperature Units Absolute Maximum V 5.5 mA 90 dBm +20 W 0.495 °C 150 °C -65 to 150 °C -40 to 85 1 Thermal Resistance Thermal Resistance [3] (Vdd = 5.0 V, Idd = 40 mA) jc = 72°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infra-Red Measurement Technique. 3. Power dissipation with unit turned on. Board temperatureTB is 25° C. Derate at 13.89 mW/°C for TB > 114° C. Electrical Specifications [1, 4] RF performance at TA = 25° C, Vdd = 5 V, Rbias = 12 kOhm, 900 MHz, measured on demo board in Figure 5 with component list in Table 1 for 900 MHz matching. Symbol Parameter and Test Condition Units Min. Typ. Max. Idd Drain Current mA 25 40.3 53 Gain Gain dB 16.3 17.8 19.3 OIP3 [2] Output Third Order Intercept Point dBm 28.5 32.8 NF [3] Noise Figure dB 0.56 0.8 OP1dB Output Power at 1dB Gain Compression dBm 21.5 IRL Input Return Loss, 50  source dB 24 ORL Output Return Loss, 50  load dB 13 REV ISOL Reverse Isolation dB 21 Notes: 1. Measurements at 900 MHz obtained using demo board described in Figure 1. 2. OIP3 test condition: FRF1 = 900 MHz, FRF2 = 901 MHz with input power of -10 dBm per tone. 3. For NF data, board losses of the input have not been de-embedded. 4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. 2 Product Consistency Distribution Charts LSLLSL Id Max : 53 Min : 25 Mean : 40.3 USLUSL USL Noise Figure Max : 0.8 Mean : 0.56 30 40 Figure 1. Idd @ 900 MHz, Mean = 40.3 50 0.5 0.6 0.7 Figure 2. Noise Figure @ 900 MHz, Mean = 0.56 0.8 LSL OIP3 Min : 28.5 Mean : 32.8 LSL Gain Max : 19.3 Min : 16.3 Mean : 17.8 USL 26 27 28 29 30 31 32 33 34 35 36 37 Figure 3. OIP3 @ 900 MHz, Mean = 32.8 16 17 18 Figure 4. Gain @ 900 MHz, Mean = 17.8 19 Notes: 1. Distribution data samples are 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Circuit Losses have not .


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