Document
MGA-683P8 Low Noise And High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-683P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75 mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 450 MHz up to 2 GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make the MGA-683P8 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA. For optimum performance at higher frequency from 1.5 GHz to 4 GHz, the MGA-684P8 is recommended. Both MGA-683P8 and MGA-684P8 share the same package and pinout.
Pin Configuration and Package Marking 2.0 x 2.0 x 0.75 mm3 8-lead QFN
[1] [8]
[2] 83X [7]
[3] [6] [4] [5]
[8] [7]
[6] [5]
[1] [2]
[3] [4]
Top View
Bottom View
Pin 1 – Vbias Pin 2 – RFinput Pin 3 – Not Used Pin 4 – Not Used
Pin 5 – Not Used Pin 6 – Not Used Pin 7 – RFoutput/Vdd Pin 8 – Not Used Centre tab - Ground
Note: Package marking provides orientation and identification “83” = Device Code “X” = Month Code
Features
Low noise Figure High linearity performance GaAs E-pHEMT Technology[1] Low cost small package size: 2.0 x 2.0 x 0.75 mm3 Excellent uniformity in product specifications Tape-and-Reel packaging option available
Specifications
900 MHz; 5 V, 40 mA 17.8 dB Gain 0.56 dB Noise Figure More than 20 dB Input Return Loss 32.8 dBm Output IP3 21.5 dBm Output Power at 1dB gain compression
Applications
Low noise amplifier for cellular infrastructure for GSM and CDMA.
Other low noise application. Repeater, Metrocell/Picocell application.
Simplified Schematic
Vdd
C5 Rbias C6
R1 C3
R2 C4
RFin L3
L1 C1
[1] [2] [3] [4]
L2
[8] C2
[7] [6] [5]
RFout
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 90 V (Class A) ESD Human Body Model = 500 V (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
Note: The schematic is shown with the assumption that similar PCB is used
for both MGA-683P8 and MGA-684P8. Detail of the components needed for this product is shown in Table 1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices. Good RF practice requires all unused pins to be earthed.
Absolute Maximum Rating [1] TA=25° C
Symbol Vdd
Idd Pmax
Pdiss Tj Tstg Tamb MSL
Parameter Device Voltage, RF output to ground
Drain Current
CW RF Input Power (Vdd = 5.0 V, Id = 54 mA) Total Power Dissipation [2]
Junction Temperature
Storage Temperature
Ambient Temperature
Units Absolute Maximum V 5.5
mA 90 dBm +20
W 0.495 °C 150 °C -65 to 150 °C -40 to 85
1
Thermal Resistance
Thermal Resistance [3] (Vdd = 5.0 V, Idd = 40 mA) jc = 72°C/W
Notes: 1. Operation of this device in excess of any of
these limits may cause permanent damage. 2. Thermal resistance measured using Infra-Red
Measurement Technique. 3. Power dissipation with unit turned on. Board
temperatureTB is 25° C. Derate at 13.89 mW/°C for TB > 114° C.
Electrical Specifications [1, 4]
RF performance at TA = 25° C, Vdd = 5 V, Rbias = 12 kOhm, 900 MHz, measured on demo board in Figure 5 with component list in Table 1 for 900 MHz matching.
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
Idd Drain Current
mA 25
40.3 53
Gain Gain
dB 16.3 17.8 19.3
OIP3 [2]
Output Third Order Intercept Point
dBm 28.5 32.8
NF [3]
Noise Figure
dB 0.56 0.8
OP1dB
Output Power at 1dB Gain Compression
dBm 21.5
IRL Input Return Loss, 50 source
dB 24
ORL Output Return Loss, 50 load
dB 13
REV ISOL
Reverse Isolation
dB 21
Notes: 1. Measurements at 900 MHz obtained using demo board described in Figure 1. 2. OIP3 test condition: FRF1 = 900 MHz, FRF2 = 901 MHz with input power of -10 dBm per tone. 3. For NF data, board losses of the input have not been de-embedded. 4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2
Product Consistency Distribution Charts
LSLLSL
Id Max : 53 Min : 25 Mean : 40.3
USLUSL
USL
Noise Figure Max : 0.8 Mean : 0.56
30 40 Figure 1. Idd @ 900 MHz, Mean = 40.3
50
0.5 0.6 0.7 Figure 2. Noise Figure @ 900 MHz, Mean = 0.56
0.8
LSL
OIP3 Min : 28.5 Mean : 32.8
LSL
Gain Max : 19.3 Min : 16.3 Mean : 17.8
USL
26 27 28 29 30 31 32 33 34 35 36 37 Figure 3. OIP3 @ 900 MHz, Mean = 32.8
16 17 18 Figure 4. Gain @ 900 MHz, Mean = 17.8
19
Notes: 1. Distribution data samples are 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits. 2. Circuit Losses have not .