Ordering number:EN2966B
NPN Triple Diffused Planar Silicon Transistor
2SC3895
Ultrahigh-Definition CRT Display Horizont...
Ordering number:EN2966B
NPN Triple Diffused Planar Silicon
Transistor
2SC3895
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC3895]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat)
VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=5A, IB=1.2A IC=5A, IB=1.2A
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Ratings 1500 800 6 7 16 3.0 60 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
800
max 10 1.0
1.0 5
1.5
Unit
µA mA V mA V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably...