DatasheetsPDF.com

C2669 Dataheets PDF



Part Number C2669
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC2669
Datasheet C2669 DatasheetC2669 Datasheet (PDF)

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj .

  C2669   C2669


HMD-A440 C2669 CPD-E500


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)