BDT64F

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT64F -60 VCER Collector-Emitter Voltage BDT64AF -80 V BDT64BF -100 BDT64CF -120 BDT64F -60 VCEO Collector-Emitter Voltage BDT64AF -80 V BDT64BF -100 BDT64CF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 39 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 5.7 ℃/W BDT64F/AF/BF/CF isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64F -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64AF IC= -30mA ;IB=0 BDT64BF -80 -100 V BDT64CF -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -10...