2SA708

ST 2SA708 PNP Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O and Y according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Value 80 60 8 700 800 150 - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 2 V, -IC = 50 mA Current Gain Group R hFE 40 - 80 - O hFE 70 - 140 - Y hFE 120 - 240 - Collector Base Cutoff Current at -VCB = 60 V -ICBO - - 0.1 µA Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA -IEBO - - 0.1 µA -V(BR)CBO 80 - - V -V(BR)CEO 60 - - V Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA -V(BR)EBO -VCEsat 8 - - -V - 0.7 V Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Current Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA -VBEsat fT - - 1.1 V 50 - MHz Output Capacitance at -VCB = 10 V, IE = 0, f = 1 MHz Cob - 13 - pF Page 1 of 2 7/20/2012 ST 2SA708 Page 2 of 2 7/20/2012 ...