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ABA-52563 Dataheets PDF



Part Number ABA-52563
Manufacturers Agilent
Logo Agilent
Description 3.5 GHz Broadband Silicon RFIC Amplifier
Datasheet ABA-52563 DatasheetABA-52563 Datasheet (PDF)

Agilent ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Agilent’s ABA-52563 is an economical, easy-to-use, internally 50-ohm matched silicon monolithic amplifier that offers excellent gain and flat broadband response from DC to 3.5 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it requires half the board space of a SOT-143 package. At 2 GHz, the ABA-52563 offers a small-signal gain of 21.5 dB, output P1dB of 9.8 dBm and 19.9 dBm output third orde.

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Agilent ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Agilent’s ABA-52563 is an economical, easy-to-use, internally 50-ohm matched silicon monolithic amplifier that offers excellent gain and flat broadband response from DC to 3.5 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it requires half the board space of a SOT-143 package. At 2 GHz, the ABA-52563 offers a small-signal gain of 21.5 dB, output P1dB of 9.8 dBm and 19.9 dBm output third order intercept point. It is suitable for use as buffer amplifiers for wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communications systems. Surface Mount Package SOT-363 /SC70 Pin Connections and Package Marking GND 1 GND 2 Input 2Hx Output & Vcc GND 3 Vcc Note: Top View. Package marking provides orientation and identification. “x” is character to identify date code. Features • Operating frequency: DC ~ 3.5 GHz • 21.5 dB gain • VSWR < 2.0 throughout operating frequency • 9.8 dBm output P1dB • 3.3 dB noise figure • Unconditionally stable • Single 5V supply (Id = 35 mA) • Lead-free option available Applications • Amplifier for cellular, cordless, special mobile radio, PCS, ISM, wireless LAN, DBS, TVRO, and TV tuner applications ABA-52563 is fabricated using Agilent’s HP25 silicon bipolar process, which employs a doublediffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Simplified Schematic Vcc RF Input Ground 2 Ground 3 RF Output & Vcc Ground 1 ABA-52563 Absolute Maximum Ratings[1] Symbol Parameter Vcc Device Voltage, RF output to ground (T = 25°C) Pin CW RF Input Power (Vcc = 5V) Pdiss Total Power Dissipation[3] Tj Junction Temperature TSTG Storage Temperature Units V dBm W °C °C Absolute Max. +7 +20 0.4 150 -65 to 150 Thermal Resistance[2] (Vcc = 5V): θjc = 106°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150°C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tb, is 25°C. Derate 3.5 mW/°C for Tb > 109°C. Electrical Specifications Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise. Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev. Gp[1] ∆Gp NF[1] P1dB[1] Power Gain (|S21|2) Power Gain Flatness, f = 0.1 ~ 2.5 GHz f = 0.1 ~ 3.5 GHz Noise Figure Output Power at 1dB Gain Compression dB 20 dB dB dBm 21.5 0.5 2.1 3.3 4 9.8 0.2 0.12 0.15 OIP3[1] Output Third Order Intercept Point dBm 19.9 0.18 VSWRin[1] VSWRout[1] Icc[1] Input VSWR Output VSWR Device Current 1.2 1.4 mA.


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