Document
Agilent ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier
Data Sheet
Description Agilent’s ABA-52563 is an economical, easy-to-use, internally 50-ohm matched silicon monolithic amplifier that offers excellent gain and flat broadband response from DC to 3.5 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it requires half the board space of a SOT-143 package.
At 2 GHz, the ABA-52563 offers a small-signal gain of 21.5 dB, output P1dB of 9.8 dBm and 19.9 dBm output third order intercept point. It is suitable for use as buffer amplifiers for wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communications systems.
Surface Mount Package SOT-363 /SC70
Pin Connections and Package Marking
GND 1 GND 2 Input
2Hx
Output & Vcc
GND 3
Vcc
Note: Top View. Package marking provides orientation and identification. “x” is character to identify date code.
Features • Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating frequency
• 9.8 dBm output P1dB
• 3.3 dB noise figure
• Unconditionally stable
• Single 5V supply (Id = 35 mA)
• Lead-free option available
Applications • Amplifier for cellular, cordless,
special mobile radio, PCS, ISM, wireless LAN, DBS, TVRO, and TV tuner applications
ABA-52563 is fabricated using Agilent’s HP25 silicon bipolar process, which employs a doublediffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability.
Simplified Schematic
Vcc
RF Input Ground 2 Ground 3
RF Output & Vcc
Ground 1
ABA-52563 Absolute Maximum Ratings[1]
Symbol Parameter
Vcc Device Voltage, RF output to ground (T = 25°C) Pin CW RF Input Power (Vcc = 5V) Pdiss Total Power Dissipation[3] Tj Junction Temperature TSTG Storage Temperature
Units
V dBm W °C °C
Absolute Max.
+7 +20 0.4 150 -65 to 150
Thermal Resistance[2] (Vcc = 5V): θjc = 106°C/W
Notes: 1. Operation of this device in excess of any of
these limits may cause permanent damage. 2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ. Max.
Std Dev.
Gp[1] ∆Gp
NF[1] P1dB[1]
Power Gain (|S21|2) Power Gain Flatness,
f = 0.1 ~ 2.5 GHz f = 0.1 ~ 3.5 GHz
Noise Figure
Output Power at 1dB Gain Compression
dB 20 dB
dB dBm
21.5 0.5 2.1 3.3 4 9.8
0.2
0.12 0.15
OIP3[1]
Output Third Order Intercept Point
dBm
19.9 0.18
VSWRin[1] VSWRout[1] Icc[1]
Input VSWR Output VSWR Device Current
1.2
1.4
mA.