Si4425DDY

P-Channel 30-V (D-S) MOSFET Si4425DDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0098 at VGS = 10 V - 30 0.0165 at VGS = 4.5 V ID (A)a - 19.7 - 15.2 Qg (Typ.) 27 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS Load Switches - Notebook PCs - Desktop PCs S G Top View Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg Limit - 30 ± 20 - 19.7 - 15.7 - 13b, c - 10.4b, c - 50 - 4.7 - 2.1b, c 5.7 3.6 2.5b, c 1.6b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Symbol RthJA RthJF Typical 35 18 Maximum 50 22 Unit °C/W Document Number: 64732 S09-0314-Rev. A, 02-Mar-09 www.vishay.com 1 Si4425DDY Vishay Siliconix SPECIFICATIONS ...