MML09211HT1

Freescale Semiconductor Technical Data Document Number: MML09211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML09211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W--CDMA and LTE. Features  Ultra Low Noise Figure: 0.52 dB @ 900 MHz  Frequency: 400--1400 MHz  Unconditionally Stable over Temperature  High Reverse Isolation: --35 dB @ 900 MHz  P1dB: 22 dBm @ 900 MHz  Small--Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)  Third Order Output Intercept Point: 32.6 dBm @ 900 MHz  Single 5 V Supply  Supply Current: 60 mA  50 Ohm Operation (some external matching required)  Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. MML09211HT1 400--1400 MHz, 21.3 dB 22 dBm E--pHEMT LNA DFN 2  2 Table 1. Typical Performance (1) Characteristic Noise Figure (2) 400 Symbol MHz NF 0.54 Input Return Loss (S11) IRL --19 Output Return Loss (S22) ORL --16 Small--Signal Gain (S21) Gp 26.1 900 MHz 0.52 --23 --16 21.3 1400 MHz 0.66 --17 --20 18.8 Unit dB dB dB dB Table...