NXP Semiconductors Technical Data
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Ampl...
NXP Semiconductors Technical Data
Heterojunction Bipolar
Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF.
Features Frequency: 400--2400 MHz P1dB: 33 dBm @ 900 MHz Small--signal gain: 17.5 dB @ 900 MHz Third order output intercept point: 49 dBm @ 900 MHz Single 5 V supply Internally input prematched to 50 ohms
Document Number: MMG3006NT1 Rev. 6, 12/2017
MMG3006NT1
400--2400 MHz, 17.5 dB 33 dBm
InGaP HBT GPA
QFN 4 4--16L
Table 1. Typical Performance (1)
Characteristic
900 1960 2140 Symbol MHz MHz MHz Unit
Small--Signal Gain (S21)
Gp 17.5 14 14 dB
Input Return Loss (S11)
IRL --8 --9 --12 dB
Output Return Loss (S22)
ORL --13 --14 --18 dB
Power Output @1dB Compression
P1db
33 33
33 dBm
Third Order Output Intercept Point
OIP3
49 49
49 dBm
1. VDC = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency.
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature
Symbol Value
VDC IDC Pin Tstg TJ
6 1400
28 --65 to +150
175
Unit V mA
dBm C C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)...