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MMG3006NT1

Freescale Semiconductor

Heterojunction Bipolar Transistor

NXP Semiconductors Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Ampl...


Freescale Semiconductor

MMG3006NT1

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Description
NXP Semiconductors Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF. Features  Frequency: 400--2400 MHz  P1dB: 33 dBm @ 900 MHz  Small--signal gain: 17.5 dB @ 900 MHz  Third order output intercept point: 49 dBm @ 900 MHz  Single 5 V supply  Internally input prematched to 50 ohms Document Number: MMG3006NT1 Rev. 6, 12/2017 MMG3006NT1 400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA QFN 4  4--16L Table 1. Typical Performance (1) Characteristic 900 1960 2140 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 17.5 14 14 dB Input Return Loss (S11) IRL --8 --9 --12 dB Output Return Loss (S22) ORL --13 --14 --18 dB Power Output @1dB Compression P1db 33 33 33 dBm Third Order Output Intercept Point OIP3 49 49 49 dBm 1. VDC = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol Value VDC IDC Pin Tstg TJ 6 1400 28 --65 to +150 175 Unit V mA dBm C C Table 3. Thermal Characteristics Characteristic Symbol Value (2)...




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