INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD818
DESCRIPTION ·High Collector-B...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD818
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
MAX
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2.5 A
IE Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
-2.5 A 50 W 150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD818
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.6A
ICBO Collector Cutoff Current
VCB= 500V; IE= 0
8.0 V 1.5 V 10 μA
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE DC Current Gain
IC= 0.5A; VCE= 5V
8
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
i.cnfT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
www.iscsemtf FallTime
ICP= 2A; IB1(end)= 0.6A
95 pF 3 MHz
1.0 μs
isc Website：www.iscsemi.cn
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