HALF-BRIDGE IGBT
Preliminary
SIM400D06AV3
“HALF-BRIDGE” IGBT MODULE
Feature
▪ design technology
▪ Low VCE (sat) ▪ Low Turn-off losses ...
Description
Preliminary
SIM400D06AV3
“HALF-BRIDGE” IGBT MODULE
Feature
▪ design technology
▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz
Applications
▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics
Package : V3
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Symbol
VCES VGE IC ICP
IF IFM tp Viso Weight Tj Tstg Md
Parameter
Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M6
Condition
TC =
TC = 80 TC = 25 TC = 80 TC = TC = 150 25 AC @ 1 minute
VCES = 600V Ic=400A
VCE(ON) typ. = 1.6V @Ic=400A
Ratings
600 20
400 (500) 800
400 (500) 800 6 (8) 2500 360
-40 ~ 150 -40 ~ 125
4.0
Unit
V V A A A A
V g
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
VCE(ON) VGE(th)
ICES IGES VF RGINT
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Integrated gate resistor
Min
Typ
1.60 5.8
1.6 1
Max Unit
Test conditions
1.95 6.5 5.0 400 2.0
IC = 400A, VGE = 15V V
VCE = VGE, Ic = 8
VGE = 0V, VCE = 600V
VCE = 0V, VGE = V
V IF = 400A, VGE = 0V
Ω
Preliminary
SIM400D06AV3
Electrical Characteristic Values (IGBT...
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