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2SA1931
Silicon PNP Transistor
Description
TOSHIBA
Transistor
Silicon
PNP
Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) High-speed switching time: tstg = 1.0 µs (typ.) Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base...
Toshiba
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