2SC752(G)TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applicat...
2SC752(G)TM
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applications Computer, Counter Applications
Unit: mm
· High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 15 5 200 40 400 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1) VCE = 1 V, IC = 10 mA
(Note)
hFE (2) VCE (sat) VBE (sat)
fT Cob
VCE = 1 V, IC = 100 mA IC = 20 mA, IB = 1 mA IC = 20 mA, IB = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.1 mA ¾ ¾ 0.1 mA
40 ¾ 240
20 ¾ ¾
¾ ¾ 0.3 V
¾ ¾ 1.0 V
200 400 ¾ MHz
¾4
6 pF
¾ 70 100
Switching time Storage time
tstg
¾ 15 30 ns
Fall time
tf Duty cycle <= 2%
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
1
¾...