Document
SD211DE/SST211 Series
N-Channel Lateral DMOS FETs
Product Summary
Part Number
SD211DE SD213DE SD215DE SST211 SST213 SST215
V(BR)DS Min (V) 30 10 20 30 10 20
VGS(th) Max (V) 1.5 1.5 1.5 1.5 1.5 1.5
SD211DE SD213DE SD215DE
SST211 SST213 SST215
rDS(on) Max (W)
45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V
Crss Max (pF) 0.5 0.5 0.5 0.5 0.5 0.5
tON Max (ns) 2 2 2 2 2 2
Features
D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode
Benefits
D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation
Applications
D Fast Analog Switch D Fast Sample-and-Holds D Pixel-Rate Switching D DAC Deglitchers D High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for "5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An
integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability.
For similar products see: quad array—SD5000/5400 series and non-Zener protection—SD210DE/214DE.
TO-206AF (TO-72)
S 1
Body Substrate 4 (Case)
TOĆ253 (SOTĆ143)
Body Substrate 1
4G
2 D
3 G
Top View SD211DE, SD213DE, SD215DE
S2
3D
Top View SST211 (D1)*, SST213 (D3)*, SST215 (D5)*
*Marking Code for TOĆ253
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295. Applications information may also be obtained via FaxBack, request document #70607.
Siliconix S-51850—Rev. F, 14-Apr-97
1
SD211DE/SST211 Series
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
GateĆDrain, GateĆSource Voltage (SD211DE/SST211) -30/25 V (SD213DE/SST213) -15/25 V (SD215DE/SST215) -25/30 V
GateĆSubstrate Voltagea (SD211DE/SST211) . . . . . . . . -0.3/25 V (SD213DE/SST213) . . . . . . . -0.3/25 V (SD215DE/SST215) . . . . . . . -0.3/30 V
DrainĆSource Voltage
(SD211DE/SST211) . . . . . . . . . . . . 30 V (SD213DE/SST213) . . . . . . . . . . . 10 V (SD215DE/SST215) . . . . . . . . . . . 20 V
SourceĆDrain Voltage
(SD211DE/SST211) . . . . . . . . . . . . 10 V (SD213DE/SST213) . . . . . . . . . . . 10 V (SD215DE/SST215) . . . . . . . . . . . 20 V
DrainĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V
SourceĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 15 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 125_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes: a. Derate 3 mW/_C above 25_C
Specificationsa
Parameter
Static
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage Drain-Substrate Breakdown Voltage Source-Substrate Breakdown Voltage
Drain-Source Leakage
Source-Drain Leakage
Gate Leakage
Threshold Voltage
Symbolb
V(BR)DS V(BR)SD V(BR)DBO V(BR)SBO IDS(off) ISD(off)
IGBS VGS(th)
Drain-Source On-Resistance
rDS(on)
2
Test Conditionsb
Limits 211 Series 213 Series 215 Series Typc Min Max Min Max Min Max Unit
VGS = VBS = 0 V, ID = 10 mA
35 30
VGS = VBS = –5 V, ID = 10 nA
30 10
10
20
VGD = VBD = –5 V, IS = 10 nA
22 10
10
20
VGB = 0 V, ID = 10 nA, Source Open
35 15
15
25
V
VGB = 0 V, IS = 10 mA, Drain Open
35 15
15
25
VDS = 10 V 0.4 10 10
VGS = VBS = –5 V VDS = 20 V 0.9
10
VSD = 10 V 0.5 10 10
nA
VGD = VBD = –5 V VSD = 20 V
1
10
VDB = VSB = 0 V, VGB = 30V
VDS = VGS, ID = 1 mA VSB = 0 V
0.01 100 100 100 0.8 0.5 1.5 0.1 1.5 0.1 1.5
V
VGS = 5 V (SD Series)
58
70
70
70
VGS = 5 V
(SST
60
75
75
75
Series)
VSB = 0 V ID = 1 mA
VGS = 10 V (SD Series)
VGS = 10 V
38
45
45
45 W
(SST
40
50
50
50
Series)
VGS = 15 V VGS = 20 V VGS = 25 V
30 26 24
Siliconix S-51850—Rev. F, 14-Apr-97
SD211DE/SST211 Series
Specificationsa
Parameter Dynamic
Forward Transconductance
Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance Switching
Turn-On Time
Turn-Off Time
Symbolb
Test Conditionsb
Limits 211 Series 213 Series 215 Series Typc Min Max Min Max Min Max Unit
gfs
VDS = 10 V VSB = 0 V
SD Series 11 SST Series .