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SD211DE Dataheets PDF



Part Number SD211DE
Manufacturers TEMIC
Logo TEMIC
Description N-Channel Lateral DMOS FETs
Datasheet SD211DE DatasheetSD211DE Datasheet (PDF)

SD211DE/SST211 Series N-Channel Lateral DMOS FETs Product Summary Part Number SD211DE SD213DE SD215DE SST211 SST213 SST215 V(BR)DS Min (V) 30 10 20 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 1.5 1.5 1.5 SD211DE SD213DE SD215DE SST211 SST213 SST215 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 0.5 0.5 0.5 tON Max (ns) 2 2 2 2 2 2 Features D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capac.

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SD211DE/SST211 Series N-Channel Lateral DMOS FETs Product Summary Part Number SD211DE SD213DE SD215DE SST211 SST213 SST215 V(BR)DS Min (V) 30 10 20 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 1.5 1.5 1.5 SD211DE SD213DE SD215DE SST211 SST213 SST215 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 0.5 0.5 0.5 tON Max (ns) 2 2 2 2 2 2 Features D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode Benefits D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation Applications D Fast Analog Switch D Fast Sample-and-Holds D Pixel-Rate Switching D DAC Deglitchers D High-Speed Driver Description The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for "5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. For similar products see: quad array—SD5000/5400 series and non-Zener protection—SD210DE/214DE. TO-206AF (TO-72) S 1 Body Substrate 4 (Case) TOĆ253 (SOTĆ143) Body Substrate 1 4G 2 D 3 G Top View SD211DE, SD213DE, SD215DE S2 3D Top View SST211 (D1)*, SST213 (D3)*, SST215 (D5)* *Marking Code for TOĆ253 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295. Applications information may also be obtained via FaxBack, request document #70607. Siliconix S-51850—Rev. F, 14-Apr-97 1 SD211DE/SST211 Series Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) GateĆDrain, GateĆSource Voltage (SD211DE/SST211) -30/25 V (SD213DE/SST213) -15/25 V (SD215DE/SST215) -25/30 V GateĆSubstrate Voltagea (SD211DE/SST211) . . . . . . . . -0.3/25 V (SD213DE/SST213) . . . . . . . -0.3/25 V (SD215DE/SST215) . . . . . . . -0.3/30 V DrainĆSource Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V (SD213DE/SST213) . . . . . . . . . . . 10 V (SD215DE/SST215) . . . . . . . . . . . 20 V SourceĆDrain Voltage (SD211DE/SST211) . . . . . . . . . . . . 10 V (SD213DE/SST213) . . . . . . . . . . . 10 V (SD215DE/SST215) . . . . . . . . . . . 20 V DrainĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V SourceĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 15 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 125_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes: a. Derate 3 mW/_C above 25_C Specificationsa Parameter Static Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Drain-Substrate Breakdown Voltage Source-Substrate Breakdown Voltage Drain-Source Leakage Source-Drain Leakage Gate Leakage Threshold Voltage Symbolb V(BR)DS V(BR)SD V(BR)DBO V(BR)SBO IDS(off) ISD(off) IGBS VGS(th) Drain-Source On-Resistance rDS(on) 2 Test Conditionsb Limits 211 Series 213 Series 215 Series Typc Min Max Min Max Min Max Unit VGS = VBS = 0 V, ID = 10 mA 35 30 VGS = VBS = –5 V, ID = 10 nA 30 10 10 20 VGD = VBD = –5 V, IS = 10 nA 22 10 10 20 VGB = 0 V, ID = 10 nA, Source Open 35 15 15 25 V VGB = 0 V, IS = 10 mA, Drain Open 35 15 15 25 VDS = 10 V 0.4 10 10 VGS = VBS = –5 V VDS = 20 V 0.9 10 VSD = 10 V 0.5 10 10 nA VGD = VBD = –5 V VSD = 20 V 1 10 VDB = VSB = 0 V, VGB = 30V VDS = VGS, ID = 1 mA VSB = 0 V 0.01 100 100 100 0.8 0.5 1.5 0.1 1.5 0.1 1.5 V VGS = 5 V (SD Series) 58 70 70 70 VGS = 5 V (SST 60 75 75 75 Series) VSB = 0 V ID = 1 mA VGS = 10 V (SD Series) VGS = 10 V 38 45 45 45 W (SST 40 50 50 50 Series) VGS = 15 V VGS = 20 V VGS = 25 V 30 26 24 Siliconix S-51850—Rev. F, 14-Apr-97 SD211DE/SST211 Series Specificationsa Parameter Dynamic Forward Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance Switching Turn-On Time Turn-Off Time Symbolb Test Conditionsb Limits 211 Series 213 Series 215 Series Typc Min Max Min Max Min Max Unit gfs VDS = 10 V VSB = 0 V SD Series 11 SST Series .


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