C2750

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5A 100 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 1A; L= 100μH VCEX(SUS)1 Collector-Emitter Sustaining Voltage IC= 10A; IB1= -IB= 1A; Ta= 125℃ L= 180μH; Clamped VCEX(SUS)2 Collector-Emitter Sustaining Voltage IC= 20A; IB1= 2A; IB2= 1A; Ta= 125℃; L= 180μH; Clamped VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 100 150 100 V V V 0.6 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 10A; IB= 1A VCB= 100V; IE= 0 1.5 V 10 μA ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Em...