2SK2959
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 7mΩ typ.
4V gate drive devices. High speed switching
Outline
TO–220AB
D
G
S
ADE-208-569C (Z) 4th. Edition Aug 1998
1 2 3
1. Gate 2. Drain(Flange 3. Source
2SK2959
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to sou...
