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MBRS5150G Dataheets PDF



Part Number MBRS5150G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description 5.0A Surface Mount Schottky Barrier Rectifiers
Datasheet MBRS5150G DatasheetMBRS5150G Datasheet (PDF)

Chip Schottky Barrier Rectifier MBRS520G THRU MBRS5200G 5.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • S.

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Chip Schottky Barrier Rectifier MBRS520G THRU MBRS5200G 5.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500/228 • Suffix "-H" indicates Halogen free parts, ex. MBRS520G-H. Mechanical data • Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AB / SMC • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.19 gram Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT T A=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.1 Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) FM520 ~ FM540 VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC FM550 ~ FM5200 VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient Junction to case f=1MHz and applied 4V DC reverse voltage Symbol IO IFSM MIN. TYP. MAX. UNIT 5.0 A 150 A IR RθJA RθJC CJ TSTG 0.5 20 mA 0.2 10 36 OC/W 16 OC/W 380 pF -65 +175 OC SYMBOLS MBRS520G MBRS530G MBRS540G MBRS550G MBRS560G MBRS580G MBRS5100G MBRS5150G MBRS5200G V * RRM 1 (V) 20 30 40 50 60 80 100 150 200 V R * MS 2 (V) 14 21 28 35 42 56 70 105 140 V * R 3 (V) 20 30 40 50 60 80 100 150 200 V * F 4 (V) 0.55 0.75 0.85 0.90 0.92 Operating temperature TJ, (OC) -55 to +125 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=5.0A @ 2010 Copyright By American First Semiconductor Page 1/2 AVERAGE FORWARD CURRENT,(A) PEAK FORWARD SURGE CURRENT,(A) MBRS520G THRU MBRS5200G Rating and characteristic curves FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE 6.0 5.0 4.0 3.0 2.0 1.0 0 0 MMBBRRSS55502G0G~M~MBBRRSS5250400GG 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 250 200 150 100 50 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 1400 1200 1000 800 600 400 200 0 .01 FIG.4-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 REVERSE LEAKAGE CURRENT, (mA) INSTANTANEOUS FORWARD CURRENT,(A) MBRS5M15B0RGS~5M8MB0BRGRS~S5MM55B20BR0RG0S~S5G52M10B0GR0~SG5M6B0RGS540G FIG.2-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=75 C 1.0 .1 TJ=25 C .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) JUNCTION CAPACITANCE,(pF) www.First-semi.com Page 2/2 .


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