Document
Chip Schottky Barrier Rectifier
MBRS520G THRU MBRS5200G
5.0A Surface Mount Schottky Barrier Rectifiers -20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of
MIL-STD-19500/228
• Suffix "-H" indicates Halogen free parts, ex. MBRS520G-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AB / SMC • Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.19 gram
Package outline SMC
0.272(6.9) 0.248(6.3)
0.012(0.3) Typ.
0.189(4.8) 0.165(4.2)
0.048(1.2) Typ.
0.098(2.5) 0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current Reverse current
Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
FM520 ~ FM540
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC
FM550 ~ FM5200
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol IO
IFSM
MIN.
TYP.
MAX. UNIT 5.0 A
150 A
IR
RθJA RθJC
CJ TSTG
0.5
20 mA 0.2 10 36 OC/W 16 OC/W
380 pF -65 +175 OC
SYMBOLS
MBRS520G MBRS530G MBRS540G MBRS550G MBRS560G MBRS580G MBRS5100G MBRS5150G MBRS5200G
V
*
RRM
1
(V)
20
30 40
50
60
80
100
150
200
V
R
*
MS
2
(V)
14
21 28
35
42
56
70
105
140
V
*
R
3
(V)
20 30 40 50 60
80 100
150
200
V
*
F
4
(V)
0.55
0.75
0.85 0.90 0.92
Operating temperature
TJ, (OC) -55 to +125
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=5.0A
@ 2010 Copyright By American First Semiconductor
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AVERAGE FORWARD CURRENT,(A)
PEAK FORWARD SURGE CURRENT,(A)
MBRS520G THRU MBRS5200G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
6.0 5.0 4.0 3.0
2.0
1.0 0
0
MMBBRRSS55502G0G~M~MBBRRSS5250400GG
20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
250
200
150 100
50
TJ=25 C
8.3ms Single Half Sine Wave JEDEC method
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
1400 1200 1000
800 600 400 200
0 .01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
REVERSE LEAKAGE CURRENT, (mA)
INSTANTANEOUS FORWARD CURRENT,(A)
MBRS5M15B0RGS~5M8MB0BRGRS~S5MM55B20BR0RG0S~S5G52M10B0GR0~SG5M6B0RGS540G
FIG.2-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=75 C
1.0
.1
TJ=25 C
.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
JUNCTION CAPACITANCE,(pF)
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