Document
Silicon Rectifier
HER501G THRU HER508G
5.0A Leaded Type Fast Recovery Effciency Rectifiers-50V-1000V
Features
• Axial lead type devices for through hole design. • 5.0A operating at TA=55°C without thermal run away • High current capability. • Ultrafast recovery time for high efficiency. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halogen free parts, ex. HER501G-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, DO-201AD • Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed • Polarity: Color band denotes cathode end • Mounting Position : Any • Weight : Approximated 1.10 gram
Package outline DO-201AD
.220(5.6) .197(5.0)
DIA.
.052(1.3) .048(1.2)
DIA.
1.0(25.4) MIN.
.375(9.5) .285(7.2)
1.0(25.4) MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50OC
Forward surge current
Reverse current Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 125OC f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT IO 5.0 A
IFSM 200 A
5.0
IR
μA 100
CJ 75 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
R
*
R
5
(nS)
HER501G HER502G HER503G HER504G HER505G HER506G
50 100 200 300 400 600
35 50 70 100 140 200 210 300 280 400 420 600
1.00 1.30
50
HER507G HER508G
800 1000
560 700
800 1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=5.0A *5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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Average Forward Current, IF(AV)(A)
Instantaneous Forward Current, IF (A)
HER501G THRU HER508G
Rating and characteristic curves
Peak Forward Surge Current , IFSM(A)
Fig.1 - Forward Current Derating Curve 6.0
5.0
4.0
3.0 2.0 1.0
single phase half wave 60Hz resistive or inductive load 0 25 50 75 100 125 150
Ambient Temperature, TA ( OC)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
200
8.3mS single half sine-wave (JEDEC Method)
150
100
50
0 12
5 10 20
50 100
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneour Forward Characteristics
100
TJ=25OC
HER505G
10 HER501G-HER504G
1.0 HER506G-HER508G
0.1 0.4 0.6 0.8
pulse width =300μS 1% duty cycle
1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage, VF (Volts)
Instantaneous Reverse Current, IR (μA)
Fig. 4 - Typical Reverse Characteristics
1000
TJ=125OC 100
10 TJ=25OC
1.0
0.1 0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
HER501G-HER505G 100
HER506G-HER508G
10 0.1
TJ=25°C f=1.0MHz Vsig=50mVp-p
1.0 10
100
Reverse Voltage, VR (Volts)
Fig. 6 - Test Circuit Diagram and Reverse Recovery Time Characteristic
50Ω noninductive
10Ω noninductive
Trr 0.5A
+
25Vdc (approx) -
1Ω non inductive
-
pulse generator (note 2)
oscilloscope (note 1)
+
0 -0.25A
-1.0A 0
5 10 15 20 25 30 time, t(nS)
Note: 1. rise time=7nS Max. input impedance=1MΩ, 22pF
2. rise time=10nS Max. source impedance=80Ω
Junction Capacitance, CJ (pF)
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