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HER501G

American First Semiconductor

(HER501G - HER508G) 5.0A Leaded Type Fast Recovery Effciency Rectifiers

Silicon Rectifier HER501G THRU HER508G 5.0A Leaded Type Fast Recovery Effciency Rectifiers-50V-1000V Features • Axial ...



HER501G

American First Semiconductor


Octopart Stock #: O-852745

Findchips Stock #: 852745-F

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Description
Silicon Rectifier HER501G THRU HER508G 5.0A Leaded Type Fast Recovery Effciency Rectifiers-50V-1000V Features Axial lead type devices for through hole design. 5.0A operating at TA=55°C without thermal run away High current capability. Ultrafast recovery time for high efficiency. High surge capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments. Suffix "-H" indicates Halogen free parts, ex. HER501G-H. Mechanical data Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, DO-201AD Lead: Axial leads, solderable per MIL-STD-202, Method 208 guranteed Polarity: Color band denotes cathode end Mounting Position : Any Weight : Approximated 1.10 gram Package outline DO-201AD .220(5.6) .197(5.0) DIA. .052(1.3) .048(1.2) DIA. 1.0(25.4) MIN. .375(9.5) .285(7.2) 1.0(25.4) MIN. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current Ambient temperature = 50OC Forward surge current Reverse current Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 125OC f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 5.0 A IFSM 200 A 5.0 IR μA 100 CJ 75 pF TSTG -65 +175 OC SYMBOLS V * RRM 1 (V) V RM * S 2 (V) V * R 3 (V) V * F 4 (V) T R * R 5 (nS) HER501G HER502G HER503G HER504G HER505G HER506G 50 100...




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