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HER107G

American First Semiconductor

(HER101G - HER108G) 1.0A Leaded Type High Effciency Rectifiers

Silicon Rectifier HER101G THRU HER108G 1.0A Leaded Type High Effciency Rectifiers - 50V-1000V Features • Axial lead ty...



HER107G

American First Semiconductor


Octopart Stock #: O-852727

Findchips Stock #: 852727-F

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Description
Silicon Rectifier HER101G THRU HER108G 1.0A Leaded Type High Effciency Rectifiers - 50V-1000V Features Axial lead type devices for through hole design. High current capability. Ultrafast recovery time for high efficiency. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments. Suffix "-H" indicates Halogen free parts, ex. HER101G-H. Mechanical data Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, DO-41 Lead: Axial leads, solderable per MIL-STD-202, Method 208 guranteed Polarity: Color band denotes cathode end Mounting Position : Any Weight : Approximated 0.33 gram Package outline DO-41 .107(2.7) .080(2.0) DIA. .034(.9) .028(.7) DIA. 1.0(25.4) MIN. .205(5.2) .166(4.2) 1.0(25.4) MIN. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current CONDITIONS Ambient temperature = 50OC Forward surge current Reverse current Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 1.0 A IFSM 30 A 5.0 IR μA 150 CJ 20 pF TSTG -65 +175 OC SYMBOLS V * RRM 1 (V) V * RMS 2 (V) V * R 3 (V) V * F 4 (V) T * RR 5 (nS) HER101G HER102G HER103G HER104G HER105G HER106G 50 100 200 300 400 600 35 50 70 100 140 200 210 300 280 400 420 600 1....




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