Document
Chip Silicon Rectifier
MURA205BG THRU MURA2100BG
2.0A Surface Mount High Effciency Rectifiers - 50V-1000V
Features
• Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to optimize board space.
• High current capability. • Ultrafast recovery time for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halogen free parts, ex. MURA205BG-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, JEDEC DO-214AA / SMB • Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.09 gram
Package outline SMB
0.213(5.4) 0.197(5.0)
0.016(0.4) Typ.
0.142(3.6) 0.126(3.2)
0.032(0.8) Typ.
0.075(1.9) 0.067(1.7)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current
CONDITIONS Ambient temperature = 50OC
Forward surge current
Reverse current Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT IO 2.0 A
IFSM 70 A
5.0
IR
μA 150
RθJA CJ
20 OC/W 25 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
MURA205BG MURA210BG MURA220BG MURA240BG MURA260BG MURA280BG MURA2100BG
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.00 1.30 1.70
50 75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=2.0A *5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT,(A)
MURA2M0U5BRAG2~4M0UBRGA220BG MURA260BG~MURA2100BG
PEAK FORWARD SURGE CURRENT,(A) AVERAGE FORWARD CURRENT,(A)
MURA205BG THRU MURA2100BG
Rating and characteristic curves
FIG.1-TYPICAL FORWARD
CHARACTERISTICS 10
1.0
.1 .01
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.001 .4
.6 .8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W NONINDUCTIVE
10W NONINDUCTIVE
(+)
25Vdc (approx.)
()
D.U.T.
1W NONINDUCTIVE
OSCILLISCOPE (NOTE 1)
()
PULSE GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0 -0.25A
trr
| | | | | | | |
-1.0A
1cm SET TIME BASE FOR
50 / 10ns / cm
JUNCTION CAPACITANCE,(pF)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
2.4 2.0 1.6 1.2
0.8
0.4 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load P.C.B. MOUNTED ON 0.3" * 0.3" (8.0mm * 8.0mm) COPPER PAD AREAS
25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
100
80
60
TJ=25 C
8.3ms Single Half
40 Sine Wave
JEDEC method
20
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
120
100 80
60
40
20
0 .01
.05 .1
.5 1
5
REVERSE VOLTAGE,(V)
10
50 100
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