FFM205G

Chip Silicon Rectifier 2.0A Fast Recovery Rectifiers-50-1000V Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Fast switching for high efficiency. High surge current capability. Glass passivated chip junction. Lead- free parts meet RoHS requirments. Suffix "-H" indicates Halogen-free parts, ex. FFM201-MG-H. Mechanical data Epoxy: UL94-V0 rated frame retardant Case: Molded plastic, JEDEC DO-214AC / SMA Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: lndicated by cathode band Mounting Position: Any Weight: Approximated 0.05 gram FFM201G THRU FFM207G Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current See Fig.1 CONDITIONS Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 125OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 2.0 A IFSM 50 A 5.0 IR μA 100 RθJA CJ 35 OC/W 40 pF TSTG -65 +175 OC SYMBOLS V * RRM 1 (V) V * RMS ...