Document
Chip Silicon Rectifier
FFM101G THRU FFM107G
1.0A Surface Mount Fast Recovery Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability. • Fast switching for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halogen-free parts, ex. FFM101G-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, JEDEC DO-214AC / SMA • Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.05 gram
Package outline SMA
0.196(4.9) 0.180(4.5)
0.012(0.3) Typ.
0.106(2.7) 0.091(2.3)
0.032(0.8) Typ.
0.068(1.7) 0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 75oC
Forward surge current
Reverse current Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT IO 1.0 A
IFSM 30 A
5.0
IR
μA 100
RθJA
42 OC/W
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FFM101G FFM102G FFM103G FFM104G
50 100 200 400
35 50 70 100 140 200 280 400
1.30
150
FFM105G FFM106G FFM107G
600 800 1000
420 560 700
600 800 1000
250 500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=1.0A *5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT,(A)
FFM101G THRU FFM107G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50Ω NONINDUCTIVE
10Ω NONINDUCTIVE
(+)
25Vdc (approx.)
()
D.U.T.
1Ω NONINDUCTIVE
OSCILLISCOPE (NOTE 1)
()
PULSE GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0 -0.25A
trr
| | | | | | | |
-1.0A
1cm SET TIME BASE FOR
50 / 10ns / cm
JUNCTION CAPACITANCE,(pF)
AVERAGE FORWARD CURRENT,(A)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2 1.0 0.8 0.6
0.4
0.2 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load
20 40
60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
40
30
TJ=25 C
8.3ms Single Half
20 Sine Wave
JEDEC method
10
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
35 30 25 20 15 10
5 0
.01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
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