N-Channel MOSFET
www.vishay.com
Si8466EDB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
MICRO FOOT® 1 x 1
S
S2
xxxxxxx
3 1
1
1 mm
...
Description
www.vishay.com
Si8466EDB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
MICRO FOOT® 1 x 1
S
S2
xxxxxxx
3 1
1
1 mm
4G D
1 mm
Backside View
Bump Side View
Marking code: xxxx = 8466
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.5 V RDS(on) max. () at VGS = 1.2 V Qg typ. (nC) ID (A) a, e Configuration
8 0.043 0.046 0.060 0.090
6.8 5.4 Single
FEATURES TrenchFET® power MOSFET Typical ESD protection 3000 V HBM Ultra small 1 mm x 1 mm maximum outline Ultra thin 0.548 mm maximum height Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
D
Low on-resistance load switch for portable devices
- Low power consumption, low
voltage drop
G
- Increased battery life
- Space savings on PCB
N-Channel MOSFET S
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
MICRO FOOT Si8466EDB-T2-E1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 300 μs) Continuous source-drain diode current
Maximum power dissipation
Operating junction and storage temperature range Package reflow conditions c
TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C
VPR IR/convection
VDS VGS ID IDM IS
PD TJ, Tstg
LIMIT
8 ±5 5.4 a 4.4 a 3.6 b 2.9 b 20 1.5 a 0.65 b 1.8 ...
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