Si8410DB

www.vishay.com Si8410DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D Backside View Bump Side View 1 mm Marking code: xxxx = 8410 xxx = Date / lot traceability code PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V Qg typ. (nC) ID (A) a Configuration 20 0.037 0.041 0.047 0.068 5.9 5.7 Single FEATURES TrenchFET® power MOSFET Ultra small 1 mm x 1 mm maximum outline Ultra-thin 0.548 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load switch Power management High speed switching D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT Si8410DB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Continuous source-drain diode current Maximum power dissipation Operating junction and storage temperature range Package reflow conditions e TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VPR IR/convection VDS VGS ID IDM IS PD TJ, Tstg LIMIT 20 ±8 5.7 a 4.5 a 3.8 c 3c 20 1.5 a 0.65 c 1.8 a 1.1 a 0.78 c 0.5 c -55 to +150 260 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL...