N-Channel MOSFET
www.vishay.com
Si8406DB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.03...
Description
www.vishay.com
Si8406DB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.033 at VGS = 4.5 V
20
0.037 at VGS = 2.5 V
0.042 at VGS = 1.8 V
ID (A) 16 e 16 e 15
Qg (TYP.) 7.5 nC
MICRO FOOT® 1.5 x 1 S
S2
xxxxxxx
D3 4
1
1 mm
1
1.5 mm
Backside View
6G
5S
D Bump Side View
Marking Code: xxxx = 8406 xxx = Date / lot traceability code
Ordering Information: Si8406DB-T2-E1 (Lead (Pb)-free and halogen-free)
FEATURES TrenchFET® power MOSFET Ultra-small 1.5 mm x 1 mm maximum outline Ultra-thin 0.59 mm maximum height Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Load switch
D
Battery management
Boost converter
Available
G
N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Package Reflow Conditions c
IR/Convection
VDS VGS ID IDM IS
PD TJ, Tstg
Notes
a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. Case in defined as the top surface of the package. e. TC = 25 °C package limited.
LIMIT 20 ±8 ...
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