Si1442DH

New Product Si1442DH Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) () (Max.) 0.020 at VGS = 4.5 V 0.024 at VGS = 2.5 V 0.030 at VGS = 1.8 V ID (A) 4 4 4 13.1 nC a Qg (Typ.) TrenchFET® Power MOSFET 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS SOT-363 SC-70 (6-LEADS) D 1 6 D D D 2 5 D Load Switch and Battery Switch for Portable Devices DC/DC Converters Low On-Resistance for Low Voltage Drop Marking Code AT XX YY G 3 4 S G Top View Ordering Information: Si1442DH-T1-GE3 (Lead (Pb)-free and Halogen-free) Lot Traceability and Date Code Part # Code S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TF = 25 °C Continuous Drain Current (TJ = 150 °C) TF = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TF = 25 °C TA = 25 °C TF = 25 °C Maximum Power Dissipation TF = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 12 ±8 4a 4a 4a, b, c 4a, b, c 20 2.3 1.3b, c 2.8 1.8 1.56b, c 1b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t5s Steady State Maximum Junction-to-Foot (Drain) Notes: a. TF = 25 °C, package limited. b. Surface mounted on 1" x 1" FR4 boa...