Si8416DB

www.vishay.com Si8416DB Vishay Siliconix N-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 8 RDS(on) () MAX. 0.023 at VGS = 4.5 V 0.025 at VGS = 2.5 V 0.030 at VGS = 1.8 V 0.040 at VGS = 1.5 V 0.095 at VGS = 1.2 V ID (A) d 16 16 16 15 3 Qg (TYP.) 17 nC MICRO FOOT® 1.5 x 1 S S2 xxxxxxx 1 mm 1 1.5 mm Backside View D3 4 1 6G 5S D Bump Side View Marking Code: xxxx = 8416 xxx = Date / lot traceability code Ordering Information: Si8416DB-T2-E1 (Lead (Pb)-free and halogen-free) FEATURES TrenchFET® power MOSFET Ultra-small 1.5 mm x 1 mm maximum outline Ultra-thin 0.59 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D Low on-resistance load switch for portable devices - Low power consumption, low voltage drop - Increased battery life - Space Saving on PCB G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Package Reflow Conditions c IR/Convection VDS VGS ID IDM IS PD TJ, Tstg LIMIT 8 ±5 16 e 16 e 9.3 a, b 7.4 a, b 20 11 2.3 a, b 13 8.4 2.77 a, b 1.77 a, b -55 to +150 260 U...