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H30T90 Dataheets PDF



Part Number H30T90
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet H30T90 DatasheetH30T90 Datasheet (PDF)

Soft Switching Series IHW30N90T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode Features: • 1.1V Forward voltage of antiparallel diode • TrenchStop® and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Applicati.

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Soft Switching Series IHW30N90T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode Features: • 1.1V Forward voltage of antiparallel diode • TrenchStop® and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications for ZCS Type IHW30N90T VCE 900V IC 30A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking H30T90 Package PG-TO-247-3 C G E PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpuls VGE ICpuls IF 23 13 36 ±20 ±25 428 -40...+175 -55...+175 260 W °C °C V Symbol VCE IC 60 30 90 90 Value 900 Unit V A 1 J-STD-020 and JESD-022 1 Rev. 2.3 Nov 08 Power Semiconductors Soft Switching Series IHW30N90T q Max. Value 0.35 1.1 40 Unit K/W Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 μ A VCE(sat) V G E = 15 V, I C =30A T j = 25 ° C T j = 150 ° C T j = 175 ° C Diode forward voltage VF VGE=0V, IF=10A T j = 25 ° C T j = 150 ° C T j = 175 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =150 μ A, V C E = V G E V C E = 90 0 V , VGE=0V T j = 25 ° C T j = 150 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f =1MHz V C C = 72 0 V, I C =30A V G E =15V 13 nH 2617 96 38 280 nC pF IGES gfs V C E = 0 V , V G E =20V V C E =20V, I C =20A 26 250 2500 600 nA S 4.6 1.1 1.0 1.0 5.3 1.3 6 μA 1.5 1.7 1.8 1.7 900 V Symbol Conditions Value min. Typ. max. Unit RthJA RthJCD RthJC Symbol Conditions Power Semiconductors 2 Rev. 2.3 Nov 08 Soft Switching Series IHW30N90T q Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 ° C , V C C = 60 0 V, I C =30A, V G E = 0 /1 5 V, RG=15Ω, 45 26 556 29 1.8 1.8 mJ ns Symbol Conditions Value min. Typ. max. Unit Switching Characteristic, Inductive Load, at Tj=175 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 175 ° C V C C = 60 0 V, I C =30A, V G E = 0 /1 5 V, RG= 15Ω 44 38 650 41 2.4 2.4 mJ ns Symbol Conditions Value min. Typ. max. Unit Power Semiconductors 3 Rev. 2.3 Nov 08 Soft Switching Series IHW30N90T q tp=1µs 80A 10µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT TC=80°C 60A TC=110°C 40A 10A 20µs 50µs 200µs 1ms Ic 20A 1A DC 0A 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 400W 350W 300W 250W 200W 150W 100W 50W 0W 25°C 50A IC, COLLECTOR CURRENT Ptot, DISSIPATED POWER 40A 30A 20A 10A 50°C 75°C 100°C 125°C 150°C 0A 25°C 75°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Power Semiconductors 4 Rev. 2.3 Nov 08 Soft Switching Series IHW30N90T q 80A 70A VGE=20V 15V 80A 70A VGE=20V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 60A 50A 40A 30A 20A 10A 0A 0V IC, COLLECTOR CURRENT 2V 3V 13V 11V 9V 7V 60A 50A 40A 30A 20A 10A 1V 0A 0V 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION .


SM4364NAKP H30T90 NL6448BC33-64C


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