R1LV1616RBG-7SI

Preliminary R1LV1616R Series 16Mb superSRAM (1M wordx16bit) This product is under development and its specification might be changed without any notice. REJ03C0101-0002Z Rev.0.02 2003.10.24 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.7-3.6V power supply Small stand-by current:4µA (3.0V, typ.) Smaller stand-by current by "Data retention mode"(“CS2"='L') : 1µA (3.0V, typ.) Data retention supply voltage =2.0V No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1#, CS2, LB# and UB# Common Data I/O Three-state outputs: OR-tie capability OE# prevents data contention on the I/O bus Process technology: 0.15um CMOS Rev.0.02 2003.10.24 page 1 of 16 R1LV1616R Series Preliminary This product is under development and its specific...