HFS7N60

HFS7N60 Dec 2005 BVDSS = 600 V HFS7N60 600V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) ) RDS(on) typ = 0.96 Ω ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 7.0* 4.4* 28* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 420 70 7.0 4.8 5.5 48 0.38 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 2.6 62.5 ℃/W Units ◎ SEMIHOW REV.A0,Decy 2005 HFS7N60 Electrical Characteristics TC=25 °C Symbol y Parameter unless otherwise specified Test Conditions Mi...