SiA915DJ

Dual P-Channel 30 V (D-S) MOSFET SiA915DJ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.087 at VGS = - 10 V - 30 0.145 at VGS = - 4.5 V ID (A) - 4.5a - 4.5a Qg (Typ.) 3.2 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Compliant to RoHS Directive 2002/95/EC PowerPAK SC-70-6 Dual APPLICATIONS Power Switch for Motor Drive for Portable Devices 1 S1 D1 D1 6 G2 5 2.05 mm S2 4 2 G1 D2 3 D2 2.05 mm Marking Code Part # code DLX XXX Lot Traceability and Date code S1 S2 G1 G2 D1 D2 Ordering Information: SiA915DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 30 V VGS ± 20 TC = 25 °C - 4.5a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 4.5a - 3.7b, c TA = 70 °C - 2.9b, c A Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS - 15 - 4.5a - 1.6b, c TC = 25 °C 6.5 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 5 1.9b, c W TA = 70 °C 1.2b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambien...