SiA907EDJT

SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at VGS = -2.5 V ID (A) -4.5 a -4.5 a Qg (TYP.) 4.9 nC FEATURES TrenchFET® power MOSFET Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance Typical ESD protection: 1500 V HBM High speed switching Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SC-70-6L Dual S2 4 G2 5 D1 6 D1 D2 APPLICATIONS 1 S1 Charger Switch, Load Switch for Portable Devices Battery Management S1 S2 Marking Code: DM Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free) SiA907EDJT-T4-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TJ, Tstg PD IDM IS ID SYMBOL VDS VGS LIMIT -20 ± 12 -4.5 a -4.5 a -4.5 a, b, c -3.8 b, c -15 -4.5 a -1.6 b, c 7.8 5 1.9 b, c 1.2 b, c -55 to 150 260 °C W A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Dr...